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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 *High Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for switching regulators, high resolution deflection circuits, inverters and motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER D44TD3 VCEV Collector-Emitter Voltage D44TD4 D44TD5 D44TD3 VCEO Collector-Emitter Voltage D44TD4 D44TD5 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 400 500 600 300 350 400 5 4 8 50 150 -65~150 V A A W V V UNIT D44TD3/4/5 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER D44TD3 VCEO(SUS) Collector-Emitter Sustaining Voltage D44TD4 D44TD5 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage D44TD3 ICEV Collector Cutoff Current D44TD4 D44TD5 IEBO hFE Emitter Cutoff Current DC Current Gain IC= 2A; IB= 0.4A B D44TD3/4/5 CONDITIONS MIN 300 MAX UNIT IC= 0.1A ;IB= 0 B 350 400 1.0 1.5 0.1 0.1 0.1 1.0 5 V V V IC= 2A; IB= 0.4A B VCE= 400V;VBE(off)= 1.5V VCE= 500V;VBE(off)= 1.5V VCE= 600V;VBE(off)= 1.5V VEB= 6V; IC=0 IC= 2A ; VCE= 3V mA mA isc Websitewww.iscsemi.cn 2 |
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